DocumentCode
2160600
Title
Accurate design of HBT VCOs with flicker noise up-conversion minimization, using an advanced low-frequency cyclostationary noise model
Author
Gourdon, Cyril ; Nallatamby, Jean-Christophe ; Baglieri, Didier ; Prigent, Michel ; Camiade, Marc ; Obregon, Juan
Author_Institution
UMS S.A.S. RD, Orsay, France
fYear
2005
fDate
12-17 June 2005
Abstract
We present a scalable cyclostationary low frequency noise model of GaInP/GaAs HBT, oriented to oscillator circuits CAD, and its implementation in commercial simulators. In order to verify the validity of the scalable noise model, several MMIC VCOs have been designed in the microwave range from 2GHz up to 24 GHz and processed at UMS foundry. Experimental results have been compared with the predicted one showing an excellent agreement without any retrofitting. They validate the proposed low frequency noise model for multifinger HBTs. To our knowledge it is the first time that VCOs are designed using non linear transistor models including LF cyclostationary noise sources.
Keywords
III-V semiconductors; MMIC oscillators; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; phase noise; semiconductor device models; semiconductor device noise; voltage-controlled oscillators; 2 to 24 GHz; GaInP-GaAs; MMIC voltage controlled oscillator; flicker noise up-conversion minimization; heterojunction bipolar transistor; low-frequency cyclostationary noise model; nonlinear transistor models; oscillator circuits CAD; phase noise; 1f noise; Circuit noise; Circuit simulation; Design automation; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; MMICs; Microwave oscillators; Minimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1516984
Filename
1516984
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