Title :
Buried oxide inhomogeneity in low-dose SIMOX structures
Author :
Afanas´ev, V.V. ; Stesmans, A. ; Revesz, A.G. ; Hughes, H.L.
Author_Institution :
Semicond. Phys. Lab., Leuven Univ., Belgium
Abstract :
In this work, we will show that the incorporation of Si islands in the SIMOX BOX at doses above optimum correlates with the formation of oxide inclusions with a reduced HF etching rate. The orientation of some of these inclusions is found in registry with the Si crystal substrate. It is suggested that they originate from oxygen precipitation, not only in the form of amorphous SiO2 but, also, as coesite-like ribbons which may lock Si islands inside the BOX
Keywords :
SIMOX; buried layers; etching; inclusions; ion implantation; island structure; precipitation; HF etching; Si crystal substrate; Si islands; Si-SiO2; amorphous SiO2; buried oxide inhomogeneity; coesite ribbons; low-dose SIMOX structure; oxide inclusions; oxygen precipitation; Amorphous materials; Annealing; Atomic force microscopy; Conductivity; Etching; Hafnium; Laboratories; Production; Shape; Substrates;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634929
