Title :
Sub-20 fs time resolved EXAFS at the Si K edge
Author :
Seres, E. ; Spielmann, Ch
Author_Institution :
Wurzburg Univ., Wurzburg
Abstract :
From the modulation in the absorption spectrum it is possible to estimate the atomic distance as described in the frame of extended x-ray absorption fine structure spectroscopy (EXAFS). By combining EXAFS with methods of conventional pump-probe spectroscopy it is possible to follow atomic motion such as structural modification after the excitation with an intense laser pulse. The structural modification triggered with an ultrafast laser pulses can be probed by recording the x-ray absorption spectra above the K or L edge using ultrashort x-ray pulses.
Keywords :
EXAFS; X-ray lasers; amorphous semiconductors; atomic structure; laser beams; silicon; time resolved spectra; Si; X-ray absorption spectra; absorption spectrum modulation; atomic distance estimation; atomic motion; extended X-ray absorption fine structure spectroscopy; intense laser pulse excitation; pump-probe spectroscopy; structural modification; time 20 fs; time resolved EXAFS; ultrashort X-ray pulses; Atom lasers; Atomic beams; Atomic measurements; Electromagnetic wave absorption; Laser excitation; Optical pulse generation; Optical pulses; Physics; Spectroscopy; X-ray lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386374
