• DocumentCode
    2160712
  • Title

    New frontiers of sub-100 nm VLSI technology-moving toward device and circuit co-design

  • Author

    Fukuma, M.

  • Author_Institution
    Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
  • fYear
    2000
  • fDate
    13-15 June 2000
  • Firstpage
    4
  • Lastpage
    7
  • Abstract
    Scaling has been a basic principle for continuing progress in the development of VLSIs for a long time. However, this situation is changing when the design rule is approaching to 100 nm or less, and the SOC has become important. Instead of conventional scaling, integration of digital innovations in devices and circuits is now playing an important role. This paper analyzes the background of this change and defines new frontiers for device technology of sub-100 nm VLSIs.
  • Keywords
    VLSI; integrated circuit design; integrated circuit technology; 100 nm; VLSI technology; circuit design; device design; scaling; system-on-a-chip; Capacitance; MOSFET circuits; National electric code; Silicon; System-on-a-chip; Temperature dependence; Tunneling; Very large scale integration; Voltage; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-6305-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2000.852746
  • Filename
    852746