DocumentCode
2160907
Title
Infrared Mapping of Material and Doping Contrasts in Microelectronic Devices at Nanoscale Spatial Resolution
Author
Huber, A. ; Wittborn, J. ; Keilmann, F. ; Hillenbrand, R.
Author_Institution
Max-Planck-Inst. fur Biochem., Martinsried
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
In this paper we demonstrate that infrared scattering-type scanning near-field optical microscopy (s-SNOM) allows mapping of different materials and electron concentrations in cross-sectional samples of industrial integrated circuit device structures at nanoscale spatial resolution.
Keywords
doping; doping profiles; integrated circuits; nanoelectronics; nanostructured materials; near-field scanning optical microscopy; SNOM; electron concentration; industrial integrated circuit device structure; infrared mapping; infrared scattering; microelectronic device; nanoscale spatial resolution; scanning near-field optical microscopy; Doping; Electron optics; Integrated optics; Microelectronics; Nanoscale devices; Optical devices; Optical materials; Optical microscopy; Optical scattering; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386384
Filename
4386384
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