Title :
Copper contamination induced degradation of MOSFET characteristics and reliability
Author :
Inohara, M. ; Sakurai, H. ; Yamaguchi, T. ; Tomita, H. ; Iijima, T. ; Oyamatsu, H. ; Nakayama, T. ; Yoshimura, H. ; Toyoshima, Y.
Author_Institution :
Microelectron Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
MOSFET electrical characteristics and reliability impact with copper contamination is examined and some degradation modes are inspected. The mechanism of degradation is explained by increase of carrier trap sites in gate silicon oxide. The permissive contamination level of copper in device region is indicated by comparison between two different contamination level samples.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; chemical interdiffusion; copper; electromigration; hot carriers; integrated circuit interconnections; integrated circuit reliability; interface states; leakage currents; surface contamination; Cu; MOSFET; breakdown voltage; carrier trap sites; contamination induced degradation; copper contamination; damascene interconnection; degradation mechanism; degradation modes; electrical characteristics; gate silicon oxide; hot carriers; junction leak current; permissive contamination level; reliability; Atomic measurements; Capacitors; Contamination; Copper; Degradation; MOSFET circuits; Materials reliability; Pollution measurement; Silicon; Substrates;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852755
