Title :
Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics
Author :
Wen-Jie Qi ; Nieh, R. ; Byoung Hun Lee ; Onishi, K. ; Laegu Kang ; Yongjoo Jeon ; Lee, J.C. ; Kaushik, V. ; Bich-Yen Neuyen ; Prabhu, L. ; Eisenbeiser, K. ; Finder, J.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper, we report the transistor performance of both PMOS and NMOS fabricated with ZrO/sub 2/ and Zr-silicate gate dielectrics. These high-k films exhibit low leakage, low subthreshold swing (S), and good on-off characteristics. Good effective electron and hole mobilities were obtained. It was found that for Zr-silicate, a mobility closer to thermal SiO/sub 2/ was demonstrated due to the better interface with Si substrate.
Keywords :
MOSFET; dielectric thin films; electron mobility; hole mobility; leakage currents; permittivity; zirconium compounds; MOSFET; NMOS transistor; PMOS transistor; Zr silicate; ZrO/sub 2/; ZrSiO/sub 4/; electron mobility; high-k film; hole mobility; leakage current; on-off characteristics; subthreshold swing; ultrathin gate dielectric; Charge carrier processes; Dielectric measurements; Dielectric substrates; Electron mobility; High-K gate dielectrics; MOS devices; MOSFETs; Rapid thermal annealing; Thermal stability; Zirconium;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852760
