Title :
Novel MIS Al/sub 2/O/sub 3/ capacitor as a prospective technology for Gbit DRAMs
Author :
In-Sung Park ; Byoung Taek Lee ; Sung Je Choi ; Jae Soon Im ; Seung Hwan Lee ; Ki Yeon Park ; Joo Won Lee ; Yong Woo Hyung ; Yeong Kwan Kim ; Heung Soo Park ; Young Wook Park ; Sang In Lee ; Moon Yong Lee
Author_Institution :
Process Dev. Team, Samsung Electron. Co. Ltd., Yongin City, South Korea
Abstract :
A novel MIS-Al/sub 2/O/sub 3/ capacitor technology was developed with the low thermal budget and showed the superior dielectric characteristics, which were achieved by adopting ALD technique for the Al/sub 2/O/sub 3/ film deposition. A fully integrated 1 Gbit DRAM with MIS-Al/sub 2/O/sub 3/ capacitor was successfully worked, where storage capacitance and leakage current at 1.2 V were 30 fF/cell and 0.5 fA/cell, respectively. Moreover, the excellent dielectric characteristics were confirmed from the result that Vp for generating solid "0" 10 sec fail bit counts was measured to be 2.4 V.
Keywords :
DRAM chips; MIS capacitors; alumina; dielectric thin films; 1 Gbit; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ MIS capacitor; DRAM technology; atomic layer deposition; dielectric film; leakage current; storage capacitance; Capacitance; Capacitors; Character generation; Dielectric measurements; Electrodes; Leakage current; Random access memory; Solids; Thermal resistance; Tin;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852761
