Title :
Metamorphic 94 GHz power amplifier MMICs
Author :
Tessmann, A. ; Leuther, A. ; Schwoerer, C. ; Massler, H.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
In this paper, we present the development of two 94 GHz power amplifier MMICs for use in high-resolution synthetic aperture radar (SAR) systems. The amplifier circuits have been realized using a 0.1 μm InAlAs/InGaAs based depletion type metamorphic high electron mobility transistor (MHEMT) technology in combination with coplanar circuit topology and dual-gate transistors, thus leading to an excellent power and gain performance at millimeter-wave frequencies. The realized two-stage driver amplifier (MPA) MMIC exhibited a small-signal gain of 16 dB and a saturated output power of 20.5 dBm at 94 GHz with a total gate width of 0.72 mm in the output stage. The two-stage high power amplifier (HPA) circuit achieved a linear gain of 10 dB and a saturated output power of 23.3 dBm with a total output periphery of 1.44 mm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; millimetre wave power amplifiers; power integrated circuits; 0.1 micron; 0.72 mm; 10 dB; 94 GHz; InAlAs-InGaAs; MHEMT technology; amplifier circuits; coplanar circuit topology; depletion type metamorphic high electron mobility transistor; dual-gate transistors; high-resolution synthetic aperture radar; metamorphic power amplifier MMIC; two-stage driver amplifier MMIC; two-stage high power amplifier; Circuits; Gain; HEMTs; High power amplifiers; Indium compounds; MMICs; MODFETs; Power amplifiers; Power generation; Synthetic aperture radar;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517002
