DocumentCode :
2161142
Title :
Quantum dot device
Author :
Coleman, J.J.
Author_Institution :
University of Illinois
fYear :
2011
fDate :
18-22 Sept. 2011
Firstpage :
1
Lastpage :
24
Abstract :
Presents a collection of slides covering the following topics: Bohr model of the atom; real systems; semiconductor physics on one slide; quantum well; quantum wire; quantum dot; Frank-van der Merwe growth; Stranski-Krastonow growth; selective area epitaxy; SAE patterned quantum dots; growth-rate defined patterned quantum dots; quantum dot lasers; carrier collection; inhomogeneous broadening; laser characteristics; 1.55μm InAs quantum dots on InP; wet etched patterned quantum dots; resonant scattering structures; ordered nanopore array; dispersion relation; density of states and gain spectrum; wave functions; 77K photoluminescence; and exascale computing grand challenge.
Keywords :
etching; quantum dot lasers; quantum wells; quantum wires; Bohr model; Bohr model of the atom; Frank-van der Merwe growth; InAs quantum dots; InP; Quantum dot device; Stranski-Krastonow growth; atom semiconductor physics; carrier collection; carriers; dispersion relation; exascale computing; gain spectrum; growth-rate defined patterned quantum dots; inhomogeneous broadening; laser characteristics; ordered nanopore array; photoluminescence; quantum dot device; quantum dot lasers; quantum size effects; quantum size effectsquantum dot device; quantum well; quantum wire; real systems; resonant scattering structures; selective area epitaxy; wave functions; wet etched patterned quantum dots; Atom lasers; Atom optics; Laser modes; Quantum dot lasers; Quantum dots; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication (ECOC), 2011 37th European Conference and Exhibition on
Conference_Location :
Geneva
ISSN :
Pending
Print_ISBN :
978-1-4577-1918-9
Type :
conf
Filename :
6066047
Link To Document :
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