Medium power amplifiers covering 90-130 GHz for the ALMA telescope local oscillators

Author

Samoska, L. ; Bryerton, E. ; Morgan, M. ; Thacker, D. ; Saini, K. ; Boyd, T. ; Pukala, D. ; Peralta, A. ; Hu, M. ; Schmitz, A.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

2005

fDate

12-17 June 2005

Abstract

This paper describes a set of power amplifier (PA) modules containing InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama large millimeter array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; indium compounds; integrated circuit design; millimetre wave power amplifiers; oscillators; telescopes; 20 to 45 mW; 90 to 130 GHz; ALMA telescope local oscillators; Atacama large millimeter array telescope; HEMT monolithic millimeter-wave integrated circuit chips; InP; high electron mobility transistor MMIC chips; local oscillator sources; medium power amplifiers; solid state HEMT MMIC modules; HEMTs; High power amplifiers; Indium phosphide; Local oscillators; MMICs; MODFETs; Millimeter wave integrated circuits; Optical design; Power amplifiers; Telescopes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1517003

Filename

1517003