Extracting the Model Parametrs of Ferroelectric Thin Film from the Experimental Characteristics of the Capacitance of a Planar Capacitor

Author

Yudin, P. ; Ski, M. Nikol´ ; Vendik, O. ; Zubko, S. ; Vendik, I.

Author_Institution

Electrotechnical University, St. Petersburg, 197376, Russia, Phone/Fax: +7 (812) 3460867, E-mail: mwlab@eltech.ru.

fYear

2001

fDate

24-26 Sept. 2001

Firstpage

1

Lastpage

4

Abstract

A procedure of extracting model parametrs of a ferroelectric thin film from the experimental characteristics of the capacitance and the loss tangent of a planar capacitor is proposed. It is based on a correct phenomenological model of the capacitance and the loss tangent of the planar capacitor containing the ferroelectric thin film. The calculation of the model parameters was realized by Monte Carlo method based on properties of the quasi-random sequences. The software allows calculating capacitance and loss tangent of the planar capacitor as a function of temperature and biasing field. The model is used for a development of a CAD tool intended for a design of tunable microwave devices based on ferroelectric films.

Keywords

Capacitance; Capacitance-voltage characteristics; Capacitors; Design automation; Ferroelectric films; Ferroelectric materials; Superconducting microwave devices; Temperature dependence; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. 31st European

Conference_Location

London, England

Type

conf

DOI

10.1109/EUMA.2001.338942

Filename

4140010