InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth

Author

Schneider, K. ; Driad, R. ; Makon, R.E. ; Tessmann, A. ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Weimann, G.

Author_Institution

Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany

fYear

2005

fDate

12-17 June 2005

Abstract

Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs double heterojunction bipolar transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-parameters, is flat up to 80 GHz.

Keywords

III-V semiconductors; MMIC amplifiers; S-parameters; bipolar MMIC; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 10.5 dB; 101 GHz; 85 GHz; 9.5 dB; DHBT distributed amplifier MMIC; InP-InGaAs; S-parameters; bipolar transistor amplifiers; double heterojunction bipolar transistors; group delay; Bandwidth; Delay; Distributed amplifiers; Double heterojunction bipolar transistors; Gain; Impedance matching; Indium gallium arsenide; Indium phosphide; MMICs; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1517005

Filename

1517005