Title :
THz sensing of doping concentrations in epitaxial semi-conductors and 2-D electron gases: theory and experiment
Author :
Kelly, D.P. ; Darmo, J. ; Unterrainer, K.
Author_Institution :
Vienna Univ. of Technol., Vienna
Abstract :
This study aims to determine the doping concentrations of an epitaxial doped semiconductor and a 2-D electron gas (GaAs/Al0.3Ga0.7As quantum well) using a reflection based THz imaging system and Hall effect technique. Results show good agreement between the two methods which indicate that the THz measurement is an effective nondestructive means of estimating doping concentrations. The theoretical model however underestimates the doping concentration.
Keywords :
III-V semiconductors; aluminium compounds; chemical sensors; doping profiles; gallium arsenide; high-speed optical techniques; semiconductor doping; semiconductor epitaxial layers; semiconductor quantum wells; submillimetre wave detectors; two-dimensional electron gas; 2D electron gases; GaAs-Al0.3Ga0.7As; Hall effect technique; THz sensing; doping concentrations; epitaxial doped semiconductor; quantum well; reflection based THz imaging; Biomedical measurements; Doping; Electrons; Frequency; Gallium arsenide; Gases; Hall effect; Plasma measurements; Reflection; Semiconductor process modeling;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386403
