Title :
Damascene metal gate MOSFETs with Co silicided source/drain and high-k gate dielectrics
Author :
Matsuo, K. ; Saito, T. ; Yagishita, A. ; Iinuma, T. ; Murakoshi, A. ; Nakajima, K. ; Omoto, S. ; Suguro, K.
Author_Institution :
Microelectron Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Damascene metal gate MOSFETs with Co silicided source/drain and high-k dielectrics were successfully formed without agglomeration of CoSi/sub 2/ films. Good transistor characteristics were reproducibly obtained and shorter inverter delay was confirmed by 151 stage CMOS ring oscillators.
Keywords :
MOSFET; cobalt compounds; dielectric thin films; semiconductor device metallisation; CMOS ring oscillator; Co silicided source/drain; CoSi/sub 2/; CoSi/sub 2/ film; MOSFET; damascene metal gate; high-k gate dielectric; inverter delay; Annealing; Conductivity; Dielectric breakdown; High-K gate dielectrics; MOSFETs; Oxidation; Ring oscillators; Silicides; Thermal stability; Tin;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852773
