DocumentCode
2161329
Title
Damascene metal gate MOSFETs with Co silicided source/drain and high-k gate dielectrics
Author
Matsuo, K. ; Saito, T. ; Yagishita, A. ; Iinuma, T. ; Murakoshi, A. ; Nakajima, K. ; Omoto, S. ; Suguro, K.
Author_Institution
Microelectron Eng. Lab., Toshiba Corp., Yokohama, Japan
fYear
2000
fDate
13-15 June 2000
Firstpage
70
Lastpage
71
Abstract
Damascene metal gate MOSFETs with Co silicided source/drain and high-k dielectrics were successfully formed without agglomeration of CoSi/sub 2/ films. Good transistor characteristics were reproducibly obtained and shorter inverter delay was confirmed by 151 stage CMOS ring oscillators.
Keywords
MOSFET; cobalt compounds; dielectric thin films; semiconductor device metallisation; CMOS ring oscillator; Co silicided source/drain; CoSi/sub 2/; CoSi/sub 2/ film; MOSFET; damascene metal gate; high-k gate dielectric; inverter delay; Annealing; Conductivity; Dielectric breakdown; High-K gate dielectrics; MOSFETs; Oxidation; Ring oscillators; Silicides; Thermal stability; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852773
Filename
852773
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