DocumentCode :
2161766
Title :
Self-powered supplies for SCR, IGBT, GTO and IGCT devices: A review of the state of the art
Author :
Afsharian, Jahangir ; Wu, Bin ; Zargari, N.
Author_Institution :
Ryerson Univ., Toronto, ON
fYear :
2009
fDate :
3-6 May 2009
Firstpage :
920
Lastpage :
925
Abstract :
In this paper, self-powered supply (SPS) techniques for gate drivers of different high power switches such as SCRs, IGBTs, GTOs, IGCTs, MOSFETs, and ETOs are surveyed. System configurations and operation principles of selected proposals in the literature are demonstrated. Compared to the external power supplies, SPSs bear the advantages of lower system cost and size, and increased reliability of power devices. The merits and drawbacks of some techniques are also discussed.
Keywords :
MOSFET; insulated gate bipolar transistors; power supply circuits; switches; thyristors; IGBT; MOSFET; external power supplies; gate drivers; high power switches; power devices; self-powered supply techniques; Capacitors; Costs; Driver circuits; Insulated gate bipolar transistors; Power supplies; Power system reliability; Power transformer insulation; Snubbers; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2009. CCECE '09. Canadian Conference on
Conference_Location :
St. John´s, NL
ISSN :
0840-7789
Print_ISBN :
978-1-4244-3509-8
Electronic_ISBN :
0840-7789
Type :
conf
DOI :
10.1109/CCECE.2009.5090262
Filename :
5090262
Link To Document :
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