Performance of γ-irradiated gate-all-around SOI MOS OTA amplifiers

Gate-All-Around SOI MOSFETs are very promising for the fabrication of ultra rad-hard circuits. The specific structure of the GAA device allows to combine radiation hardness and the great technological potential of SOI technology, e.g. for low-voltage low-power or high temperature circuits. Up to now only few studies have been realized on rad-hard GAA analog circuits. Present work discusses the performances of GAA SOI Operational Transconductance Amplifier (OTA) implementations under γ-rays irradiation. The main OTA parameters, i.e. DC open-loop gain and gain-bandwidth product, have been investigated and correlated to the evolution of the Early voltage and the scaled transconductance of individual devices. The experiments were performed up to a total dose of 15 Mrad(Si) on two OTA architectures