Title :
Integrated circuit technology options for RFIC´s-present status and future directions
Author :
Larson, Lawrence E.
Author_Institution :
Center for Wireless Commun., California Univ., San Diego, La Jolla, CA, USA
Abstract :
This paper summarizes the technology tradeoffs that are involved in the implementation of radiofrequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise-figure, linearity, gain, power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS, and BJT, Si/SiGe HBTs, and GaAs MESFETs, PHEMTs and HBTs are examined
Keywords :
CMOS integrated circuits; HEMT integrated circuits; MESFET integrated circuits; MMIC; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit technology; land mobile radio; mobile radio; reviews; transceivers; GaAs; GaAs HBT; GaAs MESFET; GaAs PHEMT; IC technology options; Integrated circuit technology; RFIC; Si; Si BJT; Si CMOS; Si-SiGe; Si/SiGe HBT; UHF IC; pseudomorphic HEMT; radio transceiver circuits; radiofrequency integrated circuits; wireless communications; CMOS technology; Germanium silicon alloys; Integrated circuit noise; Integrated circuit technology; Linearity; Power dissipation; Radio transceivers; Radiofrequency integrated circuits; Silicon germanium; Wireless communication;
Conference_Titel :
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-3669-0
DOI :
10.1109/CICC.1997.606607
