A High Gain-Bandwidth Baseband GaAs P-HEMT Matrix Distributed Amplifier IC with a Shifted Second Tier Structure

Author

Yang, Sung-Gi ; Seo, Kwang-Seok

Author_Institution

RF Design Group, S-LSI Division, Samsung Electronics Co. Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea. Fax: +82-31-280-8319, E-mail: ysg21c@popsmail.com

fYear

2001

fDate

24-26 Sept. 2001

Firstpage

1

Lastpage

4

Abstract

A new matrix distributed amplifier has been proposed, in which the second tier has been shifted to the output load. It was intended to increase the amplifications from the later shunt arms of the center line whose voltages are always larger than that of the earlier ones, so that the overall gain could be improved without compromising with the bandwidth. In addition, a new bias scheme was also employed that extended the gain down to the extremely low frequency and resulted in a first baseband matrix distributed amplifier. The proposed design has been verified by using a 0.25Â¿m self-aligned gate GaAs P-HEMT coplanar IC process, and yielded a gain of 18.5dB from 0-30 GHz, which was 3dB higher than that of the conventional design.

Keywords

Arm; Bandwidth; Baseband; Cutoff frequency; Distributed amplifiers; FETs; Gallium arsenide; Optical amplifiers; Transmission line matrix methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. 31st European

Conference_Location

London, England

Type

conf

DOI

10.1109/EUMA.2001.338969

Filename

4140037