Title :
A High Gain-Bandwidth Baseband GaAs P-HEMT Matrix Distributed Amplifier IC with a Shifted Second Tier Structure
Author :
Yang, Sung-Gi ; Seo, Kwang-Seok
Author_Institution :
RF Design Group, S-LSI Division, Samsung Electronics Co. Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea. Fax: +82-31-280-8319, E-mail: ysg21c@popsmail.com
Abstract :
A new matrix distributed amplifier has been proposed, in which the second tier has been shifted to the output load. It was intended to increase the amplifications from the later shunt arms of the center line whose voltages are always larger than that of the earlier ones, so that the overall gain could be improved without compromising with the bandwidth. In addition, a new bias scheme was also employed that extended the gain down to the extremely low frequency and resulted in a first baseband matrix distributed amplifier. The proposed design has been verified by using a 0.25¿m self-aligned gate GaAs P-HEMT coplanar IC process, and yielded a gain of 18.5dB from 0-30 GHz, which was 3dB higher than that of the conventional design.
Keywords :
Arm; Bandwidth; Baseband; Cutoff frequency; Distributed amplifiers; FETs; Gallium arsenide; Optical amplifiers; Transmission line matrix methods; Voltage;
Conference_Titel :
Microwave Conference, 2001. 31st European
Conference_Location :
London, England
DOI :
10.1109/EUMA.2001.338969
