Split gate cell with phonon assisted ballistic CHE injection

Author

Saito, T. ; Ogura, S. ; Ogura, T. ; Yuda, T. ; Kawazu, Y. ; Ikegami, M. ; Uchiyama, A. ; Ono, T.

Author_Institution

Halo LSI Inc., Wappingers Falls, NY, USA

fYear

2000

fDate

13-15 June 2000

Firstpage

126

Lastpage

127

Abstract

A planar channel split floating gate memory cell with an ultra short channel of <40 nm (within 3-4/spl times/ of the electron mean free path) is presented, in which high energy channel hot electrons generated by ballistic channel transport can be injected by phonon scattering with slight energy loss. This planar channel device can match the <1 /spl mu/s program speed of the previously reported step channel ballistic device at the same low voltages of Vd=5 V, Vcg=5 V. The structural differences between a planar and step channel are evaluated.

Keywords

CMOS digital integrated circuits; cellular arrays; flash memories; high field effects; hot carriers; integrated circuit design; low-power electronics; 5 V; CMOS; channel hot electrons; energy loss; flash memory; low-voltage operation; phonon assisted ballistic CHE injection; phonon scattering; planar channel; planar channel split floating gate memory cell; split gate cell; step channel; structural differences; ultra short channel; Boron; Channel hot electron injection; Fabrication; Large scale integration; Logic programming; Nonvolatile memory; Phonons; Production; Scattering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852796

Filename

852796