Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias

Author

Chiang, L.P. ; Tsai, C.W. ; Wang, T. ; Liu, U.C. ; Wang, M.C. ; Hsia, L.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2000

fDate

13-15 June 2000

Firstpage

132

Lastpage

133

Abstract

Enhanced hot carrier degradation is observed in DTMOS-like operation mode. This phenomenon is attributed to Auger recombination assisted hot electron process. Measured hot electron gate current and light emission spectrum in nMOSFETs provide evidence that the high-energy tail of channel electrons is increased by the application of a positive substrate bias. As opposed to conventional hot carrier degradation, the Auger enhanced degradation exhibits positive temperature dependence and is more significant at low drain bias.

Keywords

Auger effect; MOSFET; electron-hole recombination; hot carriers; semiconductor device reliability; Auger recombination enhancement; DTMOS-like operation mode; drain bias; gate current; high-energy tail; hot carrier degradation; light emission spectrum; nMOSFETs; positive substrate bias; positive temperature dependence; Acceleration; Charge carrier processes; Current measurement; Degradation; Electron emission; Hot carriers; MOSFETs; Spontaneous emission; Tail; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852798

Filename

852798