• DocumentCode
    2161940
  • Title

    Impact of ion implantation statistics on V/sub T/ fluctuations in MOSFETs: comparison between decaborane and boron channel implants

  • Author

    Tuinhout, H. ; Widdershoven, F. ; Stolk, P. ; Schmitz, J. ; Dirks, B. ; van der Tak, K. ; Bancken, P. ; Politiek, J.

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • fYear
    2000
  • fDate
    13-15 June 2000
  • Firstpage
    134
  • Lastpage
    135
  • Abstract
    MOSFETs with virtually identical doping profiles and DC behaviour exhibit significantly larger stochastic threshold voltage fluctuations when the channel is implanted using decaborane (B/sub 10/H/sub 14/) as compared to those with conventional boron implanted channels. This paper presents a unique experimental confirmation of the contribution of ion implantation statistics to V/sub T/ fluctuations.
  • Keywords
    MOSFET; doping profiles; ion implantation; semiconductor device measurement; statistical analysis; DC behaviour; MOSFETs; Si:B; V/sub T/ fluctuations; decaborane channel implants; doping profiles; ion implantation statistics; stochastic threshold voltage fluctuations; CMOS technology; Doping profiles; Feeds; Fluctuations; Implants; Ion implantation; MOSFETs; Magnetic materials; Magnetic separation; Statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-6305-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2000.852799
  • Filename
    852799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2161940