• DocumentCode
    2162097
  • Title

    A 6.25-GHz low DC power low-noise amplifier in SiGe

  • Author

    Ainspan, Herschel ; Soyuer, Mehmet ; Plouchart, Jean-Olivier ; Burghartz, Joachim

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1997
  • fDate
    5-8 May 1997
  • Firstpage
    177
  • Lastpage
    180
  • Abstract
    A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA´s figure of merit gain/(PDC×NF) of 0.56 mW-1 exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA´s
  • Keywords
    Ge-Si alloys; MMIC amplifiers; bipolar MMIC; integrated circuit noise; semiconductor materials; 2.2 to 3.5 dB; 2.5 V; 20.4 dB; 6.25 GHz; 6.4 mW; 9.4 mW; SHF; SiGe; SiGe bipolar technology; low DC power LNA; low-noise amplifier; monolithic LNA; Circuits; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; MESFETs; MIM capacitors; Noise figure; Resistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-7803-3669-0
  • Type

    conf

  • DOI
    10.1109/CICC.1997.606608
  • Filename
    606608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2162097