Title :
A 12-GHz GaInP/GaAs HBT VCO based on push-push output extraction from capacitive common-node
Author :
Kim, Jongsik ; Jeon, Sanghoon ; Moon, Seongdae ; Kim, Nam-Young ; Shin, Hyunchol
Author_Institution :
RFIC Res. Center, Kwangwoon Univ., Seoul, South Korea
Abstract :
A new push-push VCO architecture takes the second harmonic output signal from a capacitive common-node in a negative-gm oscillator topology. The generation of the 2nd harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. A prototype 12-GHz MMIC VCO realized in GaInP/GaAs HBT achieves an output power of -5 dBm, a phase noise of -108 dBc/Hz at 1 MHz offset while drawing 10.7 mA from a 2.4-V supply, which is equivalent to -175.8 dBc/Hz of VCO figure-of-merit.
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MMIC; gallium arsenide; gallium compounds; indium compounds; network topology; voltage-controlled oscillators; 1 MHz; 10.7 mA; 12 GHz; 2.4 V; 2nd harmonics generation; GaInP-GaAs; MMIC VCO system; capacitive common-node; emitter-base junction diode; heterojunction bipolar transistor; negative-gm oscillator; nonlinear current-voltage characteristics; push-push VCO architecture; push-push output extraction; second harmonic output signal; voltage clipping; voltage controlled oscillator; Character generation; Current-voltage characteristics; Diodes; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Prototypes; Topology; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517044