Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates

Author

Huttner, T. ; Mahnkopf, R. ; Wurzer, H. ; Pindl, S. ; Abstreiter, G.

Author_Institution

Semicond. Div., Siemens AG, Dresden, Germany

fYear

1997

fDate

6-9 Oct 1997

Firstpage

66

Lastpage

67

Abstract

The damaging of the buried oxide in n-channel SOI-MOSFETs during hot carrier stress has been described by several authors, Observed damaging mechanisms are hole trapping and interface state generation. Almost all investigations were made with devices fabricated on SIMOX substrates. Hole and electron trapping in SIMOX and BESOI material was investigated by X-ray irradiation, front gate oxide hot carrier degradation was also studied. In this work the damaging of the buried oxide in ultra thin (45 nm) n-channel SOI-MOSFETs during front channel hot carrier stress has been investigated The magnitude of the different damaging mechanisms in identically processed devices on SIMOX and two different BESOI substrates was compared

Keywords

MOSFET; SIMOX; hot carriers; internal stresses; semiconductor device reliability; silicon-on-insulator; SIMOX/BESOI substrates; buried oxide; damaging mechanisms; front channel stress; fully depleted n-channel MOSFETs; hot-carrier degradation; Charge carrier processes; Degradation; Electron traps; Hot carriers; Interface states; MOSFETs; Stress measurement; Substrates; Tellurium; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634935

Filename

634935