An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits

Author

Xiaodong Jin ; Kanyu Cao ; Jia-Jiunn Ou ; Weidong Liu ; Yuhua Cheng ; Matloubian, M. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2000

fDate

13-15 June 2000

Firstpage

196

Lastpage

197

Abstract

An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

Keywords

CMOS integrated circuits; MOSFET; SPICE; high-speed integrated circuits; integrated circuit modelling; semiconductor device models; 2D simulation; RF circuits; ac simulation; accurate nonquasistatic SPICE model; channel length; high speed circuits; nonquasistatic MOSFET model; radio frequency circuits; relaxation time; simulation; transient simulation; Circuit simulation; Computational modeling; Computer simulation; Electrical resistance measurement; MOSFET circuits; Parameter extraction; Radio frequency; SPICE; Semiconductor device modeling; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852823

Filename

852823