Title :
Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling [CMOS technology]
Author :
Wen-Chin Lee ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A model is proposed to quantify the tunneling currents through ultra-thin gate oxides. With a proper set of effective mass and barrier height, this new model can accurately predict the gate and substrate currents and all the subcomponents in dual-gate CMOS devices. This model can also be employed to extract T/sub ox/ for thin oxide from I-V data with 0.1/spl Aring/ sensitivity, where C-V extraction can be difficult or impossible.
Keywords :
CMOS integrated circuits; conduction bands; effective mass; integrated circuit modelling; tunnelling; valence bands; I-V data; barrier height; conduction-band; dual-gate CMOS devices; effective mass; electron tunneling; gate currents; hole tunneling; modelling; substrate currents; tunneling currents; ultra-thin gate oxides; valence-band; Charge carrier processes; Current measurement; Effective mass; Electrodes; MOS devices; MOSFETs; Predictive models; Threshold voltage; Tunneling; USA Councils;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852824
