Title :
Vdd impact on propagation pulse width variation in PD SOI circuits
Author :
Min, B.W. ; Workman, G. ; Duckhyun Chang ; Zia, O. ; Yanyao Yu ; Widenhofer, R. ; Simon, B. ; Cave, N. ; Sanchez, H. ; Veeraraghavan, S. ; Mendicino, M. ; Yeargain, B.
Author_Institution :
HiPerMOS Center, Motorola Inc., Austin, TX, USA
Abstract :
Pulse width variation through open-ended chains in partially depleted SOI is investigated. Vdd impact on the pulse variation (either compression or stretching) is intensively studied, as well as temperature and illumination contributions. A physical model using well-known capacitive coupling, generation, and recombination concepts is proposed with experimental data.
Keywords :
field effect integrated circuits; silicon-on-insulator; open-ended chain; partially depleted SOI circuit; propagation pulse width; Coupling circuits; Heating; Lighting; Low voltage; Propagation delay; Pulse circuits; Pulse compression methods; Space vector pulse width modulation; Temperature; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852825
