Transmission Lines on Low Resistivity Silicon Substrate for MMICs Applications

Author

Six, G. ; Vanmackelberg, M. ; Happy, H. ; Dambrine, G. ; Boret, S. ; Gloria, D.

Author_Institution

Institut d´´Electronique et de MicroÃ©lectronique du Nord, UMR CNRS 9929, UniversitÃ© des Sciences et Technologies de Lille, Avenue PoincarrÃ©, BP 69, 59652 Villeneuve d´´Ascq - France. Gonzague.six@iemn.univ-lille1.fr

fYear

2001

fDate

24-26 Sept. 2001

Firstpage

1

Lastpage

4

Abstract

In this paper, transmission lines structures (Thin Film Microstrip -TFMS- and coplanar waveguide -CPW-) on low resistivity (Â¿ = 10 Â¿-cm) silicon substrate are investigated, for millimeter wave applications. From the designer point of view, useful parameters such as losses versus characteristic impedance are calculated. The results obtained on TFMS fabricated with CMOS 15 Â¿-cm process from ST Microelectronics (five metal levels) and an alternative solution using BCB layer are shown. Moreover, low loss CPW structures on silicon substrate are designed and optimized using a thick dielectric layer (10 Â¿m of BCB). Finally, to obtain low value of characteristic impedance with this configuration, a fully embedded CPW transmission line is used. Attenuation coefficient of these structures is less than 0.6 dB/mm @ 50GHz.

Keywords

Conductivity; Coplanar transmission lines; Coplanar waveguides; Dielectric losses; Dielectric substrates; Impedance; MMICs; Semiconductor thin films; Silicon; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. 31st European

Conference_Location

London, England

Type

conf

DOI

10.1109/EUMA.2001.338998

Filename

4140066