DocumentCode :
2162527
Title :
High divider ratio fast response capacitive dividers for high voltage pulse measurements
Author :
Jayaram, S. ; Xu, X. ; Cross, J.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume :
2
fYear :
1995
fDate :
8-12 Oct 1995
Firstpage :
1201
Abstract :
The paper reports the experimental results of the development of a novel capacitive divider for high voltage pulse measurements. The low voltage arm capacitor was prepared by thermally growing silicon oxide on commercially available silicon wafers to form capacitors of very large capacitance per unit area (>10 nF with 2 μm oxide thickness on a 30 mm diameter wafer). With the proposed design for LV arm capacitance, divider ratios of the order >10000 can easily be obtained. Further studies have been carried out to improve the response time of this high division ratio divider
Keywords :
capacitance; capacitors; electron device testing; high-voltage techniques; voltage dividers; voltage measurement; 2 mum; 30 mm; Si-SiO; capacitive dividers; design; divider ratio; fast response time; high voltage pulse measurements; thermal growth; Capacitance; Capacitors; Delay; Electrodes; Low voltage; Optical pulse generation; Power system transients; Pulse measurements; Pulse power systems; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location :
Orlando, FL
ISSN :
0197-2618
Print_ISBN :
0-7803-3008-0
Type :
conf
DOI :
10.1109/IAS.1995.530436
Filename :
530436
Link To Document :
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