Impacts of strained SiO/sub 2/ on TDDB lifetime projection

Author

Harada, Y. ; Eriguchi, K. ; Niwa, M. ; Watanabe, T. ; Ohdomari, I.

Author_Institution

ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan

fYear

2000

fDate

13-15 June 2000

Firstpage

216

Lastpage

217

Abstract

We clarify the effects of the strained-SiO/sub 2/ on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (/spl beta/) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO/sub 2/ changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T/sub pd/ and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (/spl sim/115/spl deg/) for the 2 nm-thick SiO/sub 2//Si system.

Keywords

Weibull distribution; bond angles; electric breakdown; silicon compounds; SiO/sub 2/; TDDB lifetime; Weibull slope; activation energy; bond angle; extended-Stillinger-Weber potential model; statistical distribution; strained SiO/sub 2/; time dependent dielectric breakdown; ultrathin gate oxide; Bonding; Capacitive sensors; Dielectric breakdown; Electric breakdown; Electron traps; Probability; Statistical distributions; Thermodynamics; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852831

Filename

852831