DocumentCode
2162687
Title
T/sub BD/ prediction from measurements at low field and room temperature using a new estimator
Author
Ghetti, A. ; Bude, J. ; Weber, G.
Author_Institution
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
fYear
2000
fDate
13-15 June 2000
Firstpage
218
Lastpage
219
Abstract
We present a new method to predict oxide breakdown from measurements at low voltage and room temperature. The method is based on tunneling into interface states (TEDit). We show that TEDit correlates to breakdown. Then we exploit this correlation to predict oxide lifetime.
Keywords
electric breakdown; interface states; tunnelling; estimator; interface states; oxide breakdown; oxide lifetime; room temperature low field measurements; tunneling; Breakdown voltage; CMOS technology; Degradation; Electric breakdown; Extrapolation; Interface states; Stress; Temperature; Testing; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852832
Filename
852832
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