Title :
T/sub BD/ prediction from measurements at low field and room temperature using a new estimator
Author :
Ghetti, A. ; Bude, J. ; Weber, G.
Author_Institution :
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
Abstract :
We present a new method to predict oxide breakdown from measurements at low voltage and room temperature. The method is based on tunneling into interface states (TEDit). We show that TEDit correlates to breakdown. Then we exploit this correlation to predict oxide lifetime.
Keywords :
electric breakdown; interface states; tunnelling; estimator; interface states; oxide breakdown; oxide lifetime; room temperature low field measurements; tunneling; Breakdown voltage; CMOS technology; Degradation; Electric breakdown; Extrapolation; Interface states; Stress; Temperature; Testing; Tunneling;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852832
