Title :
Frequency Tripler with Anti-Serial Schottky Diodes
Author :
Krach, M. ; Freyer, J. ; Claassen, M.
Author_Institution :
Walter Schottky Institut, Technische Universitÿt Mÿnchen, Am Coulombwall, D-85748 Garching, Germany. Phone: ++49 (0)89 289-12787, Fax: ++49 (0)89 3206620, Email: markus.krach@wsi.tu-muenchen.de
Abstract :
A frequency tripler for mm-waves is presented which consists of two inhomogeneously doped anti-serial Schottky diodes quasi-monolithically integrated into a microstrip circuit on quartz substrate. The multiplier combines the advantages of a varactor with symmetrical capacitance-voltage characteristic and the low leakage current of Schottky diodes [1]. Theoretically deduced design and optimisation criteria are proposed and first experimental results are given which show an rf-output power of 2 mW at 210 GHz.
Keywords :
Circuits; Design optimization; Doping; Frequency; Gallium arsenide; Leakage current; Schottky barriers; Schottky diodes; Varactors; Voltage;
Conference_Titel :
Microwave Conference, 2001. 31st European
Conference_Location :
London, England
DOI :
10.1109/EUMA.2001.339005
