DocumentCode
2162714
Title
An X/K-band Class-E High-Efficiency Frequency Doubler
Author
Weiss, Manoja D. ; Popovic, Zoya
Author_Institution
Department of Electrical and Computer Engineering, University of Colorado, Boulder CO 80309-0425 USA. Email: weissm@colorado.EDU
fYear
2001
fDate
24-26 Sept. 2001
Firstpage
1
Lastpage
4
Abstract
A class-E frequency doubler is presented at 20.8 GHz, the highest frequency reported to date. The circuit has 42.7% drain efficiency and 31.6% overall efficiency for an output power of 7.1dBm and 0.83 dB conversion gain. A maximum gain of 7.18 dB is achievable with 3.4dBm output power and 13.5% overall efficiency. The trade-off between efficiency and conversion gain is optimized by proper biasing and driving to obtain a 5.23 dB gain with an overall efficiency of 23.5%. The rejection of unwanted harmonics is greater than 26 dBm. The MESFET doubler is designed using a simple switching mode theory based on small signal device parameters.
Keywords
Circuits; Frequency conversion; Gain; K-band; MESFETs; Microwave oscillators; Power amplifiers; Power generation; Switches; Voltage; Frequency doublers; class-E; high-efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. 31st European
Conference_Location
London, England
Type
conf
DOI
10.1109/EUMA.2001.339006
Filename
4140074
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