Title :
Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability
Author :
Wachnik, R.A. ; Filippi, R.G. ; Shaw, T.M. ; Lin, P.C.
Author_Institution :
Div. of Microelectron., IBM Corp., Hopewell Junction, NY, USA
Abstract :
A simple first principles model is shown to accurately relate resistance saturation during electromigration to the current density and stripe length. Resistance saturation is found to be independent of temperature in the range 170-250/spl deg/C. The above observations allow for the development of a new design rule methodology. An electromigration resistant power grid may be designed which takes advantage of the short-length effect.
Keywords :
electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; power integrated circuits; 170 to 250 C; design rule; electromigration; first principles model; power grid; resistance saturation; short length effect; wireability; Conductors; Current density; Design methodology; Electromigration; Equations; Power grids; Stochastic processes; Stress; Temperature; Testing;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852833
