DocumentCode :
2162731
Title :
New geometry for improving Q-factor of spiral integrated inductor on low cost integrated circuit process
Author :
Hosseini, Nima ; Nabovati, Hooman
Author_Institution :
Electron. Eng., Sadjad Univ., Mashhad
fYear :
2009
fDate :
3-6 May 2009
Firstpage :
1095
Lastpage :
1098
Abstract :
Implementation of a high quality spiral inductor on silicon substrate is a long lasting challenge for the microfabrication researchers; in this paper a new spiral inductor which is compatible with the standard IC technology is proposed. This new inductor shows more quality factor and higher resonance frequency even though the overall inductance value remains almost the constant in compare with the traditional designs. This new structure shows more improvement in the peak of quality factor as the number of turn increases.
Keywords :
Q-factor; inductors; integrated circuits; IC technology; Q-factor; Si; spiral integrated inductor; Costs; Geometry; Inductance; Inductors; Integrated circuit technology; Q factor; Resonance; Resonant frequency; Silicon; Spirals; Quality factor; resonance frequency; spiral inductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2009. CCECE '09. Canadian Conference on
Conference_Location :
St. John´s, NL
ISSN :
0840-7789
Print_ISBN :
978-1-4244-3509-8
Electronic_ISBN :
0840-7789
Type :
conf
DOI :
10.1109/CCECE.2009.5090298
Filename :
5090298
Link To Document :
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