Title :
Reducing power dissipation in serially connected MOSFET circuits via transistor reordering
Author :
Hossain, Razak ; Zheng, Menghui ; Albicki, Alexander
Author_Institution :
Dept. of Electr. Eng., Rochester Univ., NY, USA
Abstract :
In this paper we show how transistor reordering based on input signal probabilities can substantially reduce the expected dynamic power dissipation in serially connected MOSFETs. The paper includes a new model for the power dissipation in a MOSFET chain and extensive simulation results. Our results indicate that transistor reordering can significantly reduce the power dissipation in CMOS NAND gates
Keywords :
circuit analysis computing; field effect transistor circuits; logic gates; MOSFET chain; NAND gates; dynamic power dissipation; input signal probabilities; power dissipation; serially connected MOSFET circuits; simulation; transistor reordering; Analytical models; CMOS technology; Capacitance; Circuit simulation; MOSFET circuits; Power MOSFET; Power dissipation; Power measurement; Semiconductor device modeling; Very large scale integration;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1994. ICCD '94. Proceedings., IEEE International Conference on
Conference_Location :
Cambridge, MA
Print_ISBN :
0-8186-6565-3
DOI :
10.1109/ICCD.1994.331989
