Title :
A 2.5-V, 1-W monolithic CMOS RF power amplifier
Author :
Su, David ; McFarland, William
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
A monolithic CMOS RF power amplifier has been designed and fabricated in a standard 0.8-μm CMOS technology and shown to provide l-W of output power at 824-849 MHz to a 50-ohm load from a single 2.5-V supply. The prototype amplifier has a measured drain efficiency of 62%, an overall power-added efficiency of 42%, a power gain of 25 dB, and a total die area of 1.5 mm2
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; integrated circuit design; power amplifiers; 0.8 micron; 1 W; 2.5 V; 25 dB; 42 percent; 62 percent; 824 to 849 MHz; CMOS power amplifier; UHF IC; monolithic RF power amplifier; CMOS technology; Gallium arsenide; Impedance matching; Power amplifiers; Power generation; Power supplies; Prototypes; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-3669-0
DOI :
10.1109/CICC.1997.606611
