A giga-scale assist-gate (AG)-AND-type flash memory cell with 20-MB/s programming throughput for content-downloading applications

Author

Kobayashi, T. ; Sasago, Y. ; Kurata, H. ; Saeki, S. ; Goto, Y. ; Arigane, T. ; Okuyama, Y. ; Kume, H. ; Kimura, K.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Proposes a new AND-type flash memory cell with an assist gate (AG), which has achieved a 20-MB/s programming throughput. For high-speed parallel programming on the order of kilobytes, fast cell programming (10 ps) and an extremely low channel current (I/sub ds/ /spl les/ 100 nA/cell) are necessary. These features were achieved by using the low current source-side injection method in which the AG was used as a program gate. The memory cell size has also been reduced to 0.104 /spl mu/m/sup 2/ by taking advantage of an AG using field isolation and a self-aligned floating gate. These technologies are the keys to giga-scale flash memories, of which the main application is content downloading.

Keywords

cellular arrays; field effect memory circuits; flash memories; 10 ps; 20 MB/s; cell programming; channel current; content downloading; field isolation; giga-scale assist-gate-AND-type flash memory; high-speed parallel programming; low current source-side injection method; memory cell size; programming throughput; selfaligned floating gate; Application software; Channel hot electron injection; Flash memory; Flash memory cells; Laboratories; Nonvolatile memory; Parallel programming; Throughput; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979395

Filename

979395