Title :
A common-gate switched, 0.9 W class-E power amplifier with 41% PAE in 0.25 /spl mu/m CMOS
Author :
Changsik Yoo ; Qinting Huang
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
A power amplifier (PA) has been implemented in a standard 0.25 /spl mu/m CMOS technology and shown to deliver 0.9 W output power to 50 /spl Omega/ load with 41% power added efficiency (PAE) from a 1.8 V supply. The PA employs the class-E configuration with finite DC-feed inductance and common-gate switching scheme to achieve high efficiency and not to stress the active devices.
Keywords :
CMOS analog integrated circuits; Switched networks; Switching circuits; UHF integrated circuits; UHF power amplifiers; 0.25 micron; 0.9 mW; 1.8 V; 41 percent; class-E power amplifier; common-gate switched power amplifier; finite DC-feed inductance; power added efficiency; standard quarter micron CMOS technology; CMOS process; CMOS technology; Inductance; Power amplifiers; Power generation; Radio frequency; Receivers; Stress; Switches; Voltage;
Conference_Titel :
VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6309-4
DOI :
10.1109/VLSIC.2000.852850
