DocumentCode :
2163270
Title :
Self-aligned microbonding technique for making butt-coupled germanium metal-semiconductor-metal waveguide photodetectors
Author :
Wei-Ting Chen ; Chih-Kuo Tseng ; Ku-Hung Chen ; Na, Neil ; Lee, Ming-Chang M.
Author_Institution :
Inst. of Photonics Technol., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
18-22 Aug. 2013
Firstpage :
51
Lastpage :
52
Abstract :
A novel process using self-aligned microbonding technique for Ge butt-coupled to silicon waveguides is presented. The photodetector features a low dark current of 0.29 μA and a high responsivity of 1.01 A/W at 1310 nm at -1 V bias.
Keywords :
dark conductivity; elemental semiconductors; germanium; metal-semiconductor-metal structures; optical waveguides; photodetectors; silicon; Ge-Si; butt-coupled germanium metal-semiconductor-metal waveguide photodetectors; dark current; self-aligned microbonding technique; silicon waveguides; voltage -1 V; wavelength 1310 nm; Absorption; Abstracts; Fabrication; Metallization; Silicon; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical MEMS and Nanophotonics (OMN), 2013 International Conference on
Conference_Location :
Kanazawa
ISSN :
2160-5033
Print_ISBN :
978-1-4799-1512-5
Type :
conf
DOI :
10.1109/OMN.2013.6659054
Filename :
6659054
Link To Document :
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