Antimony assisted arsenic S/D extension (A/sup 3/ SDE) engineering for sub-0.1 /spl mu/m nMOSFETs : a novel approach to steep and retrograde indium pocket profiles

Author

Wang, H.C.-H. ; Wang, C.-C. ; Hsieh, C.-H. ; Lu, S.-Y. ; Chiang, M.-C. ; Chu, Y.-L. ; Chen, C.-J. ; Ong, T.-C. ; Tahui Wang ; Griffin, P.B. ; Diaz, C.H.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A/sup 3/ SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1 /spl mu/m nMOSFETs. By engineering the defect distributions in the amorphous layer created by an indium implant, this new process improves by 8% the current drive while maintaining the same I/sub off/. It reduces nMOS diode leakage by two orders of magnitude and sidewall junction capacitance near the gate by 14%. Reliability assessment of devices fabricated by the A/sup 3/ SDE process reveals significant improvement in hot carrier effects and no observable degradation of gate oxide integrity.

Keywords

CMOS integrated circuits; MOSFET; antimony; arsenic; doping profiles; hot carriers; indium; integrated circuit reliability; integrated circuit technology; leakage currents; 0.1 micron; CMOS scaling; Sb assisted As source/drain extension; Si:As,Sb; Si:In; amorphous layer; current drive improvement; defect distributions; gate oxide integrity; hot carrier effects; n-channel MOSFET; nMOS diode leakage reduction; reliability assessment; retrograde In pocket profiles; sidewall junction capacitance; sub-0.1 micron nMOSFETs; Amorphous materials; Capacitance; Diodes; Drives; Hot carrier effects; Implants; Indium; MOS devices; MOSFETs; Maintenance engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979403

Filename

979403