High-field electron velocity in thin SOI films

Several techniques have been used in the past to measure the carrier velocity in silicon at high electric fields. Among these are the time-of-flight technique, avalanche current, and space-charge-limited current for bulk carriers; and current-voltage characteristics of MOSFETs for inversion layer carriers. This work describes a new technique for measuring the bulk-electron high-field velocity which makes use of device structures fabricated in thin SOI films. Temperature dependence of saturated drift velocity has been obtained and the data extended to higher temperatures than those reported in earlier publications. The results are compared with previously-published data