Title :
Evaluation of material property requirements and performance of ultra-low dielectric constant insulators for inlaid copper metallization
Author :
Wetzel, J.T. ; Lin, S.H. ; Mickler, E. ; Lee, J. ; Ahlbum, B. ; Jin, C. ; Fox, R.J., III ; Tsai, M.-H. ; Mlynko, W. ; Monnig, K.A. ; Winebarger, P.M.
Author_Institution :
Int. Sematech, Austin, TX, USA
Abstract :
Technological challenges for selection and integration of ultra-low dielectric constant insulators are discussed. Correlations of material properties with their performance in 1 level-metal inlaid copper integration are established. Dielectric constants of candidate materials are estimated from line-to-line capacitance measurements and FEM. Implications regarding the changes in dielectric constant are discussed.
Keywords :
CVD coatings; copper; dielectric thin films; integrated circuit metallisation; permittivity; Cu; FEM; inlaid Cu metallization; line-to-line capacitance measurements; material property requirements; one-level-metal inlaid Cu integration; ultra-low dielectric constant insulators; Copper; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; Failure analysis; Guidelines; Material properties; Materials testing; Semiconductor materials; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979406
