DocumentCode :
2163431
Title :
Where does memory go in the 21C? (Evolution and revolution of memory technology)
Author :
Hwang, C.G.
Author_Institution :
Samsung Electron. Co. Ltd., Kyungki, South Korea
fYear :
2000
fDate :
15-17 June 2000
Firstpage :
88
Lastpage :
91
Abstract :
For the new millennium, several "third" dimensional approaches in the memory area will take place with continuous revolutionary development from current technologies for various customers\´ demands. In the mean time, various and combined evolutionary technologies such as micro-machining technology, multi-chip stacking techniques, mixed digital/analog circuits, merged memories on a chip, cloning and genetics, biochemistry and magnetics areas are awaiting a breakthrough and will be pursued toward the generic memory goals of high density, high speed and low power more closely.
Keywords :
Integrated circuit technology; Integrated memory circuits; Low-power electronics; Mixed analog-digital integrated circuits; biochemistry; cloning; density; genetics; low power electronics; magnetics; memory technology; merged memories; micromachining technology; mixed digital/analog circuits; multi-chip stacking techniques; speed; third dimensional approaches; Copper; Immune system; Inorganic materials; Integrated circuit technology; Isolation technology; Lithography; Production; Random access memory; Silicon on insulator technology; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6309-4
Type :
conf
DOI :
10.1109/VLSIC.2000.852859
Filename :
852859
Link To Document :
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