DocumentCode :
2163444
Title :
Copper contact metallization for 22 nm and beyond
Author :
Seo, Soon-Cheon ; Yang, Chih-Chao ; Yeh, Chun-Chen ; Haran, Bala ; Horak, Dave ; Fan, Susan ; Koburger, Charles ; Canaperi, Donald ; Rao, Satyavolu S Papa ; Monsieur, Frederic ; Knorr, Andreas ; Kerber, Andreas ; Hu, Chao-Kun ; Kelly, James ; Vo, Tuan ; C
Author_Institution :
IBM, Albany NanoTech Res. Center, Albany, NY
fYear :
2009
fDate :
1-3 June 2009
Firstpage :
8
Lastpage :
10
Abstract :
We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world´s smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts.
Keywords :
capacitance; copper; leakage currents; metallisation; reliability; thermal stresses; BEOL anneal stress; CVD Ru-containing liner; Cu; copper contact metallization; leakage current; overlap capacitance; reliability; size 22 nm; thermal stress; Annealing; Capacitance; Chaos; Contact resistance; Copper; Leakage current; Metallization; Microelectronics; Thermal stresses; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
Type :
conf
DOI :
10.1109/IITC.2009.5090326
Filename :
5090326
Link To Document :
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