A 2 dB NF, fully differential, variable gain, 900 MHz CMOS LNA

Author

Sacchi, E. ; Bietti, I. ; Gatta, F. ; Svelto, F. ; Castello, R.

Author_Institution

STMicroelectron., Pavia, Italy

fYear

2000

fDate

15-17 June 2000

Firstpage

94

Lastpage

97

Abstract

A fully differential 900 MHz CMOS LNA using, as input stage, nMOS and pMOS inductively degenerated pairs, in shunt configuration, achieves the following performance: 2 dB NF, 22 dB voltage gain, -3 dBm IIP3 with 8 mA current consumption. As additional feature of this LNA is a variable gain. Measurements have been performed on packaged dies. No external components are used, except for an SMD inductor (used for tuning purposes), placed in series with the on-chip gate spiral inductor.

Keywords

CMOS analog integrated circuits; Circuit tuning; Differential amplifiers; Field effect MMIC; Inductors; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; 2 dB; 22 dB; 8 mA; 900 MHz; CMOS; IIP3; LNA; SMD inductor; fully differential amplifier; inductively degenerated pairs; on-chip gate spiral inductor; packaged dies; shunt configuration; tuning; variable gain; voltage gain; Active noise reduction; CMOS technology; Cutoff frequency; Gain; Inductors; MOS devices; Noise figure; Noise measurement; Shunt (electrical); Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6309-4

Type

conf

DOI

10.1109/VLSIC.2000.852860

Filename

852860