Title :
Highly-reliable molecular-pore-stack (MPS)-SiOCH/Cu interconnects with CoWB metal-cap films
Author :
Tagami, M. ; Furutake, N. ; Inoue, N. ; Nakazawa, E. ; Arita, K. ; Hayashi, Y.
Author_Institution :
LSI Fundamental Res. Lab., Sagamihara
Abstract :
Highly-reliable molecular-pore-stack (MPS)-SiOCH (k=2.5)/Cu interconnects with CoWB metal-cap have been developed. The MPS-SiOCH film is suitable for CoWB metal-cap by self-aligned electroless plating because of its unique pore-structure such as small-closed pores in carbon-rich SiOCH matrix. The MPS-SiOCH film suppresses the Co diffusion into the film and metal residue on the surface during the metal-cap process, achieving high TDDB reliability as well as improving reliabilities of EM and SiV remarkably. A combination of the MPS-SiOCH/Cu line and the CoWB metal-cap is a strong candidate for highly reliable LSIs.
Keywords :
boron alloys; copper; copper alloys; electroplating; integrated circuit interconnections; low-k dielectric thin films; porous materials; reliability; silicon compounds; thin films; tungsten alloys; CoWB; SiOCH-Cu; carbon-rich matrix; highly-reliable molecular-pore-stack; interconnects; metal residue; metal-cap films; metal-cap process; pore-structure; self-aligned electroless plating; Chemical processes; Cleaning; Degradation; Dielectrics; Laboratories; Large scale integration; Leakage current; Plasma chemistry; Plasma materials processing; Plasma properties;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090327
