Title :
A 25.9-GHz voltage-controlled oscillator fabricated in a CMOS process
Author :
Hung, C.-M. ; Shi, L. ; Laguado, I. ; O, K.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A 25.9-GHz voltage-controlled oscillator (VCO) has been demonstrated using 0.1-/spl mu/m NMOS transistors in a partially scaled CMOS process. The tuning range and output power level are 600 MHz and /spl sim/-22 dBm. The phase noise at a 3-MHz offset is -106 dBc/Hz when the VCO core consumes 24 mW from a 1.5-V supply. This VCO uses a MOS varactor with Q>20 at 26 GHz. Though Q is higher, due to the polysilicon gate depletion effect, the frequency tuning is not monotonic and a mechanism to limit the control voltage range is needed for phase-locked loop (PLL) applications.
Keywords :
CMOS integrated circuits; Circuit tuning; MOSFET; Phase locked loops; Phase noise; Varactors; Voltage-controlled oscillators; -106 dB; -22 dB; 0.1 mum; 1.5 V; 24 mW; 25.9 GHz; 3 MHz; 600 MHz; MOS varactor; NMOS transistors; control voltage range limitation; nonmonotonic frequency tuning; output power level; partially scaled CMOS process; phase noise; phase-locked loop applications; poly-Si gate depletion effect; tuning range; voltage-controlled oscillator; CMOS process; Frequency; MOSFETs; Phase locked loops; Phase noise; Power generation; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6309-4
DOI :
10.1109/VLSIC.2000.852862
