DocumentCode
2163516
Title
Robust design of quantum potential profile for electron transmission in semiconductor nanodevices
Author
Jun Zhang ; Kosut, Robert
Author_Institution
SC Solutions, Sunnyvale, CA, USA
fYear
2007
fDate
2-5 July 2007
Firstpage
2381
Lastpage
2386
Abstract
In this paper we address the robust design of the quantum potential profile in a in semiconductor nanodevice to achieve a desired electron transmission coefficient vs. bias voltage characteristic despite uncertainty. We formulate an optimization problem which is solved locally via a sequential linear program.
Keywords
electron gas; optimisation; semiconductor quantum dots; electron transmission coefficient; optimization problem; quantum potential profile; semiconductor nanodevices; sequential linear program; voltage characteristic; Electric potential; Linear programming; Nanoscale devices; Optimization; Robustness; Semiconductor devices; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Control Conference (ECC), 2007 European
Conference_Location
Kos
Print_ISBN
978-3-9524173-8-6
Type
conf
Filename
7068650
Link To Document